Light-emitting device

摘要

A light-emitting device comprises a first semiconductor layer; and a transparent conductive oxide layer comprising a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region.

主权项

1. A light-emitting device, comprising:
a first semiconductor layer; a second semiconductor layer; an active layer formed between the first semiconductor layer and the second semiconductor layer; a transparent conductive oxide layer comprising one or more elements formed on the second semiconductor layer; a plurality of metal sediments formed on the transparent conductive oxide layer, wherein the plurality of metal sediments comprises a metal different from the one or more elements, and the plurality of metal sediments is transmissive to a light emitted from the active layer, wherein the plurality of metal sediments comprises different thickness; and a diffusion region comprising the metal of the plurality of metal sediments formed in the transparent conductive oxide layer.