Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones

摘要

A semiconductor device includes a semiconductor mesa with at least one body zone forming first pn junctions with source zones and a second pn junction with a drift zone. A pedestal layer at a side of the drift zone opposite to the at least one body zone includes first zones of a conductivity type of the at least one body zone and second zones of the conductivity type of the drift zone. Electrode structures are on opposite sides of the semiconductor mesa. At least one of the electrode structures includes a gate electrode controlling a charge carrier flow through the at least one body zone. In a separation region between two of the source zones (i) a capacitive coupling between the gate electrode and the semiconductor mesa or (ii) a conductivity of majority charge carriers of the drift zone is lower than outside of the separation region.

主权项

1. A semiconductor device, comprising:
a semiconductor mesa comprising at least one body zone forming first pn junctions with source zones and a second pn junction with a drift zone; a pedestal layer at a side of the drift zone opposite to the at least one body zone and comprising first zones of a conductivity type of the at least one body zone and second zones of the conductivity type of the drift zone; electrode structures on opposite sides of the semiconductor mesa, wherein at least one of the electrode structures comprises a gate electrode configured to control a charge carrier flow through the at least one body zone; and a separation region between two of the source zones, respectively, wherein in the separation region (i) a capacitive coupling between the gate electrode and the semiconductor mesa or (ii) a conductivity of majority charge carriers of the drift zone is lower than outside of the separation region.