Semiconductor device and method for forming the same

摘要

A semiconductor device in which a gettering layer is formed in a semiconductor substrate, and a method for forming the same are disclosed, resulting in increased reliability of the semiconductor substrate including the gettering layer. The semiconductor device includes a semiconductor substrate; a gettering layer formed of a first-type impurity and a second-type impurity in the semiconductor substrate so as to perform gettering of metal ion; and a deep-well region formed over the gettering layer in the semiconductor substrate.

主权项

1. A semiconductor device comprising:
a first well provided at a first level; and a gettering layer provided at a second level and including a first doping layer and a second doping layer, wherein the second doping layer comprises a polarity opposite to a polarity of the first doping layer, the second level being deeper than the first level, wherein the first doping layer and the second doping layer overlap at least partially.