| 主权项 |
1. A method of manufacturing a flip-chip nitride semiconductor light emitting element, the method comprising:
a step of providing a nitride semiconductor light emitting element structure having an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, which are laminated on a substrate, wherein an n-side electrode connecting surface of the n-type nitride semiconductor layer and a p-side electrode connecting surface of the p-type nitride semiconductor layer are on the same side of the substrate; a protective layer forming step of forming an insulating protective layer on the nitride semiconductor light emitting element structure; a first resist pattern forming step of forming a first resist pattern having openings above the n-side electrode connecting surface and the p-side electrode connecting surface; a protective layer etching step of etching the protective layer to expose the n-side electrode connecting surface and the p-side electrode connecting surface using the first resist pattern as a mask; a first metal layer forming step of forming a first metal layer that becomes an n-side electrode and a p-side electrode, the first metal layer being formed as a continuous layer disposed on the n-side electrode connecting surface, the p-side electrode connecting surface and the first resist pattern; a second resist pattern forming step of forming a second resist pattern having openings above the openings of the first resist pattern, a second metal layer forming step of forming a second metal layer that becomes metal bumps formed on the n-side electrode and the p-side electrode by electrolytic plating using the first metal layer as an electrode for the electrolytic plating; and a resist pattern removing step of, after the second metal layer forming step, removing the first resist pattern, the second resist pattern, and the first metal layer formed on the first resist pattern. |
