发明名称 Image pickup apparatus, image pickup system, and image pickup apparatus manufacturing method
摘要 An image pickup apparatus includes a semiconductor substrate, and multiple pixels. Each of the multiple pixels includes a photoelectric-conversion unit disposed in the semiconductor substrate, a first conductive first semiconductor region disposed in the semiconductor substrate, which holds charge generated by the photoelectric-conversion unit at a place different from the photoelectric-conversion unit, a first transfer unit which transfers charge to the first semiconductor region, and a second transfer unit which transfers charge held at the first semiconductor region. The first semiconductor region includes a first portion, a second portion, and a third portion. At the depth where the third portion is disposed, the first portion is disposed between the third portion and first transfer unit, and the second portion is disposed between the third portion and second transfer unit. Impurity concentration of the third portion is lower than that of the first and second portions.
申请公布号 US9231021(B2) 申请公布日期 2016.01.05
申请号 US201313765525 申请日期 2013.02.12
申请人 CANON KABUSHIKI KAISHA 发明人 Kobayashi Masahiro;Yamashita Yuichiro
分类号 H01L27/148;H01L27/146;H04N5/3745 主分类号 H01L27/148
代理机构 Canon USA, Inc. IP Division 代理人 Canon USA, Inc. IP Division
主权项 1. An image pickup apparatus comprising: a semiconductor substrate; and a plurality of pixels, wherein each of the plurality of pixels includes a photoelectric conversion unit disposed in the semiconductor substrate;a first semiconductor region of a first conductive-type disposed in the semiconductor substrate, and configured to hold charge generated by the photoelectric conversion unit at a place different from the photoelectric conversion unit;a first transfer unit configured to transfer charge to the first semiconductor region; anda second transfer unit configured to transfer charge held at the first semiconductor region, the first semiconductor region includes a first portion,a second portion, anda third portion, the first portion, the second portion and the third portion being disposed at a same depth in the semiconductor substrate, the first portion is disposed between the third portion and the first transfer unit, and the second portion is disposed between the third portion and the second transfer unit; and impurity concentration of the third portion is lower than impurity concentration of the first portion and impurity concentration of the second portion.
地址 Tokyo JP