Image sensor and imaging device

摘要

In an image sensor, if a pixel for focusing has a structure having a light-shielding layer for performing pupil division, between the micro lens and the photoelectric conversion unit, the pixel may be configured such that the focal position of the micro lens is positioned further on the micro lens side than the light-shielding layer, and the distance from the focal position of the micro lens to the light-shielding layer is greater than 0 and less than nFΔ, where n is the refractive index at the focal position of the micro lens, F is the aperture value of the micro lens, and Δ is the diffraction limit of the micro lens. This enables variation in the pupil intensity distribution of the pixel for focusing due to positional production tolerance of components to be suppressed.

主权项

1. An image sensor in which a plurality of pixels are two-dimensionally arranged, comprising:
a micro lens provided on a light-receiving side of each of the plurality of pixels; and a plurality of photoelectric conversion units provided in each of the plurality of pixels, and for receiving light collected by the micro lens, wherein the plurality of photoelectric conversion units are disposed such that central points thereof are eccentric relative to a central point of a single light-receiving surface combining light-receiving surfaces of the plurality of photoelectric conversion units, a focal position of the micro lens is positioned further on the micro lens side than the light-receiving surfaces of the plurality of photoelectric conversion units, and a distance from the focal position of the micro lens to the light-receiving surfaces of the plurality of photoelectric conversion units is greater than 0 and less than nFΔ, where n is a refractive index at the focal position of the micro lens, F is an aperture value of the micro lens, and Δ is a diffraction limit of the micro lens.