发明名称 Memory devices, memory device operational methods, and memory device implementation methods
摘要 Memory devices, memory device operational methods, and memory device implementation methods are described. According to one arrangement, a memory device includes memory circuitry configured to store data in a plurality of different data states, temperature sensor circuitry configured to sense a temperature of the memory device and to generate an initial temperature output which is indicative of the temperature of the memory device, and conversion circuitry coupled with the temperature sensor circuitry and configured to convert the initial temperature output into a converted temperature output which is indicative of the temperature of the memory device at a selected one of a plurality of possible different temperature resolutions, and wherein the converted temperature output is utilized by the memory circuitry to implement at least one operation with respect to storage of the data.
申请公布号 US9230616(B2) 申请公布日期 2016.01.05
申请号 US201414151704 申请日期 2014.01.09
申请人 Micron Technology, Inc. 发明人 Luthra Yogesh;Kitagawa Makoto
分类号 G11C7/04;G01K13/00;G11C11/406 主分类号 G11C7/04
代理机构 Wells St. John P.S. 代理人 Wells St. John P.S.
主权项 1. A memory device comprising: memory circuitry configured to store data in a plurality of different data states; temperature sensor circuitry configured to sense a temperature of the memory device and to generate an initial temperature output which is indicative of the temperature of the memory device; conversion circuitry coupled with the temperature sensor circuitry and configured to convert the initial temperature output into a converted temperature output which is indicative of the temperature of the memory device at a selected one of a plurality of possible different temperature resolutions, and wherein the converted temperature output is utilized by the memory circuitry to implement at least one operation with respect to storage of the data; and wherein the converted temperature output is a first converted temperature output, and the conversion circuitry is configured to convert the initial temperature output into a second converted temperature output which is indicative of the temperature of the memory device at a selected other of the possible different temperature resolutions.
地址 Boise ID US