发明名称 Defect inspecting method and defect inspecting apparatus
摘要 A defect inspecting method and apparatus for inspecting a surface state including a defect on a wafer surface, in which a polarization state of a laser beam irradiated onto the wafer surface is connected into a specified polarization state, the converted laser beam having the specified polarization state is inserted onto the wafer surface, and a scattering light occurring from an irradiated region where the laser beam having the specified polarization state is irradiated, is separated into a first scattering light occurring due to a defect on the wafer and a second scattering light occurring due to a surface roughness on the wafer. An optical element for optical path division separates the first and second scattering lights approximately at the same time.
申请公布号 US9228960(B2) 申请公布日期 2016.01.05
申请号 US201414154612 申请日期 2014.01.14
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 Nakao Toshiyuki;Maruyama Shigenobu;Hamamatsu Akira;Urano Yuta
分类号 G01N21/00;G01N21/95;G01N21/88;H01L21/66 主分类号 G01N21/00
代理机构 Baker Botts L.L.P. 代理人 Baker Botts L.L.P.
主权项 1. A defect inspecting method of inspecting a surface state including a defect on a wafer surface, the method comprising the steps of: converting a polarization state of a laser beam irradiated onto the wafer surface into a specified polarization state; irradiating the converted laser beam having the specified polarization state onto the wafer surface; and separating a scattering light occurring from an irradiated region where the laser beam having the specified polarization state is irradiated, into a first scattering light occurring due to a defect on the wafer and a second scattering light occurring due to a surface roughness on the wafer; wherein an optical element for optical path division separates the first and second scattering lights approximately at the same time.
地址 Tokyo JP