Semiconductor light emitting element

摘要

A semiconductor light emitting element includes a metal layer, a first semiconductor layer of a first conductivity type, a light emitting layer, a second semiconductor layer of a second conductivity type, a first electrode, a second electrode, and an insulating layer. The first semiconductor layer is separated from the metal layer in a first direction. The first semiconductor layer includes a first region, a second region, and a third region. The light emitting layer has a first side surface intersecting a second direction. The second semiconductor layer has a second side surface intersecting the second direction. The first electrode is electrically connected to the first region and the metal layer. The second electrode includes a first portion, and a second portion being continuous with the first portion. The insulating layer includes a first insulating portion and a second insulating portion.

主权项

1. A semiconductor light emitting element, comprising:
a metal layer; a first semiconductor layer of a first conductivity type separated from the metal layer in a first direction, the first semiconductor layer including
a first region,a second region separated from the first region in a second direction intersecting the first direction, anda third region provided between the first region and the second region; a light emitting layer provided between the second region and the metal layer, the light emitting layer having a first side surface intersecting the second direction; a second semiconductor layer of a second conductivity type provided between the light emitting layer and the metal layer, the second semiconductor layer having a second side surface intersecting the second direction; a first electrode provided between the first region and the metal layer and electrically connected to the first region and the metal layer; a second electrode electrically connected to the second semiconductor layer, the second electrode including
a first portion provided between the third region and the metal layer, anda second portion provided between the second region and the metal layer, the second portion being continuous with the first portion, the second semiconductor layer being provided between the light emitting layer and the second portion; and an insulating layer including
a first insulating portion provided between the first portion and the third region and between the second electrode and the first side surface, anda second insulating portion provided between the second electrode and the metal layer and between the second electrode and the first electrode.