发明名称 Methods, devices and processes for multi-state phase change devices
摘要 Devices include multiple phase change materials connected in parallel between electrodes. Memory cells with multiple parallel phase change materials can be programmed to transition among more than two states representing multiple bits of information. Methods for manufacture and use are also disclosed.
申请公布号 US9227378(B2) 申请公布日期 2016.01.05
申请号 US201213568509 申请日期 2012.08.07
申请人 MICRON TECHNOLOGY, INC. 发明人 Colombo Davide;Erbetta Davide
分类号 G11C11/00;B32B7/02;B44C1/22;G11C11/56;G11C13/00 主分类号 G11C11/00
代理机构 Knobbe, Martens, Olson & Bear LLP 代理人 Knobbe, Martens, Olson & Bear LLP
主权项 1. A phase change device comprising at least two different phase change materials connected in parallel between electrodes, wherein the at least two different phase change materials comprise a first phase change material and a second phase change material, wherein a crystalline state resistance of the second phase change material is distinguishably larger than a crystalline state resistance of the first phase change material, and wherein each of the first phase change material and the second phase change material is configured to undergo a phase change that is caused by self-heating.
地址 Boise ID US