Word line driver circuit

摘要

A word line driver circuit allows for dynamic selection of different word line voltages for selection and deselection of memory cells included in a resistive memory array in a manner that reduces circuit complexity, device count, and leakage currents.

主权项

1. A magnetoresistive memory device comprising:
a magnetic tunnel junction device; a selection transistor coupled in series with the magnetic tunnel junction device; a word line coupled to a gate of the selection transistor; a first word line voltage supply having a first voltage level corresponding to a first selected state of the word line, wherein the first selected state of the word line corresponds to passing a first write current through the magnetic tunnel junction device in a first direction; a second word line voltage supply isolated from the first word line voltage supply, the second word line voltage supply having a second voltage level corresponding to a second selected state of the word line, wherein the second voltage level is greater than the first voltage level, and wherein the second selected state of the word line corresponds to passing a second write current through the magnetic tunnel junction device in a second direction; a first transistor having a gate, a drain, and a source, the first transistor coupled between the first word line voltage supply and the word line; and a second transistor having a gate, a drain, and a source, the second transistor coupled between the second word line voltage supply and the word line.