发明名称 Target for laser produced plasma extreme ultraviolet light source
摘要 Techniques for generating EUV light include directing a first pulse of radiation toward a target material droplet to form a modified droplet, the first pulse of radiation having an energy sufficient to alter a shape of the target material droplet; directing a second pulse of radiation toward the modified droplet to form an absorption material, the second pulse of radiation having an energy sufficient to change a property of the modified droplet, the property being related to absorption of radiation; and directing an amplified light beam toward the absorption material, the amplified light beam having an energy sufficient to convert at least a portion of the absorption material into extreme ultraviolet (EUV) light.
申请公布号 US9232624(B2) 申请公布日期 2016.01.05
申请号 US201514817408 申请日期 2015.08.04
申请人 ASML Netherlands B.V. 发明人 Rafac Robert J.;Tao Yezheng
分类号 H05G2/00;G03F7/20 主分类号 H05G2/00
代理机构 DiBerardino McGovern IP Group LLC 代理人 DiBerardino McGovern IP Group LLC
主权项 1. An extreme ultraviolet light source comprising: a solid state laser configured to produce pulses of radiation, the pulses of radiation comprising at least a first pulse of radiation and a second pulse of radiation; a second optical source configured to produce a third pulse of radiation, the third pulse of radiation having a different wavelength than the first pulse of radiation and the second pulse of radiation; a vacuum chamber configured to receive target material in an interior of the vacuum chamber, the target material comprising a material that emits extreme ultraviolet (EUV) light when converted to plasma; and an optical element configured to: receive the first pulse of radiation, the second pulse of radiation, and the third pulse of radiation, anddirect the first pulse of radiation, the second pulse of radiation, and the third pulse of radiation to, respectively, a first location in the interior of the vacuum chamber, a second location in the interior of the vacuum chamber, and a third location in the interior of the vacuum chamber, the first, second, and third locations being different locations in the vacuum chamber and being along a direction that is different than the directions of propagation of the first pulse, the second pulse, and the third pulse of radiation in the vacuum chamber.
地址 Veldhoven NL