Capacitive micro-machined transducer and method of manufacturing the same

摘要

The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

主权项

1. A method of manufacturing a capacitive micro-machined transducer (CMUT), the method comprising:
depositing a first electrode layer on a substrate, depositing a first dielectric film on the first electrode layer, depositing a sacrificial layer on the first dielectric film, the sacrificial layer being removable for forming a cavity of the transducer, depositing a second dielectric film on the sacrificial layer, and depositing a second electrode layer on the second dielectric film, wherein the first dielectric film and/or the second dielectric film comprises a first layer comprising an oxide, a second layer comprising a high-k material having a dielectric constant equal to 8 or more, and a third layer comprising an oxide, and wherein the second layer is sandwiched between the first and the third layer and the depositing steps are performed by Atomic Layer Deposition.