Semiconductor devices having bit line contact plugs and methods of manufacturing the same

摘要

A semiconductor device including active regions defined in a semiconductor substrate to be non-parallel with a first direction and a second direction which are perpendicular to each other, word lines intersecting active regions and extending in first directions to be spaced apart from each other in the second direction, bit lines crossing over word lines and extending in second directions to be spaced apart from each other in the first direction, first impurity regions disposed in respective ones of central portions of active regions to non-overlap with the word lines, second impurity regions disposed in both ends of each of the active regions to non-overlap with the word lines, and bit line contact plugs disposed between the first impurity regions and the bit lines. The bit line contact plugs having longish shapes including major axes substantially parallel with the second direction and minor axes substantially parallel with the first direction.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
defining an active region in a semiconductor substrate; forming line-shaped first insulation patterns on the semiconductor substrate to intersect the active region and to extend in a first direction; forming a second insulation layer on the first insulation patterns to fill spaces between the first insulation patterns; patterning the second insulation layer and the first insulation patterns to form a contact hole exposing a portion of the active region, the contact hole being formed to include a pair of first opposite sidewalls exposing the first insulation patterns and the second insulation layer and a pair of second opposite sidewalls exposing only the second insulation layer; isotropically etching the second insulation layer to enlarge the contact hole in a second direction substantially perpendicular to the first direction; and forming a conductive contact plug that fills the enlarged contact hole, wherein the first opposite sidewalls of the contact hole are substantially parallel with the second direction and the second opposite sidewalls of the contact hole are substantially parallel with the first direction.