| 发明名称 | Semiconductor devices and methods of manufacturing the same | ||
| 摘要 | A semiconductor device includes a first non-flat non-polar nitride semiconductor layer, a first structure layer on at least a portion of the surface of the first non-flat non-polar nitride semiconductor layer and a first non-polar nitride semiconductor layer on the first non-flat non-polar nitride semiconductor layer and the first structure layer. The first non-flat non-polar nitride semiconductor layer includes a plurality of solid particles. | ||
| 申请公布号 | US9230804(B2) | 申请公布日期 | 2016.01.05 |
| 申请号 | US201113242827 | 申请日期 | 2011.09.23 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD.;SNU R&DB FOUNDATION | 发明人 | Lee Sangmoon;Yoon Euijoon;Park Jinsub;Park Sung Hyun |
| 分类号 | H01L29/778;H01L21/02 | 主分类号 | H01L29/778 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A semiconductor device comprising: a first non-flat non-polar nitride semiconductor layer; a first structure layer on at least a portion of a surface of the first non-flat non-polar nitride semiconductor layer, the first structure layer including a first plurality of solid particles, the first plurality of solid particles being formed of at least one oxide material; and a first non-polar nitride semiconductor layer on the first non-flat non-polar nitride semiconductor layer and the first structure layer, the first structure layer being between the first non-polar nitride semiconductor layer and at least the portion of the surface of the first non-flat non-polar nitride semiconductor layer. | ||
| 地址 | Gyeonggi-Do KR | ||