| 发明名称 |
Magnetic shift register memory device |
| 摘要 |
In one embodiment, the invention is a magnetic shift register memory device. One embodiment of a memory cell includes a magnetic column including a plurality of magnetic domains, a reader coupled to the magnetic column, for reading data from the magnetic domains, a temporary memory for storing data read from the magnetic domains, and a writer coupled to the magnetic column, for writing data in the temporary memory to the magnetic domains. |
| 申请公布号 |
US9230624(B2) |
申请公布日期 |
2016.01.05 |
| 申请号 |
US201314059985 |
申请日期 |
2013.10.22 |
| 申请人 |
International Business Machines Corporation |
发明人 |
De Brosse John K.;Gallagher William J.;Lu Yu |
| 分类号 |
G11C19/00;G11C11/16;G11C11/14;G11C19/08 |
主分类号 |
G11C19/00 |
| 代理机构 |
|
代理人 |
Alexanian Vazken |
| 主权项 |
1. A memory cell, comprising:
at least one magnetic column comprising a plurality of magnetic domains; and at least one dummy domain within the plurality of magnetic domains, wherein the at least one dummy domain prevents writing of those of the plurality of magnetic domains that are not dummy domains. |
| 地址 |
Armonk NY US |
