CHEMICAL MECHANICAL POLISHING METHOD

摘要

A chemical mechanical polishing method of a substrate is provided. The method comprises the following steps of: providing a polishing machine having a platen; providing a substrate having an exposed silicon oxide surface; providing a chemical mechanical polishing pad comprising a polyurethane polishing layer wherein the polyurethane polishing layer composition exhibits an acid number of 0.5 mg (KOH)/g or higher; providing an abrasive slurry comprising water and a ceria abrasive; generating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; dispensing the abrasive slurry onto a polishing surface of the polyurethane polishing layer of the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; and polishing the substrate.