PHASE SHIFT BLANK MASK AND PHOTOMASK

摘要

The present invention relates to a phase inversion blank mask of which a certain level of light-screening properties is secured in a light-screening membrane which makes up the phase inversion blank mask, and an etching time is shortened at the same time, allowing the thickness of the resist film to be thin. The present invention also ensures production of a photomask using the phase inversion blank mask. According to the present invention, pattern collapse can be prevented by processing the thickness of the resist film to be thin, and micropatterns which are less than or equal to 32 nm, especially, 14 nm, and 10 nm can be formed. Thus, production of the phase inversion blank mask with excellent resolution and a photomask using the same is possible.