摘要 |
According to an aspect of the present invention, a GaAs substrate quadrature coupler comprises: first and third ports formed on one side of the outermost edge line among upper spiral patterns of the GaAs substrate; and second and fourth ports formed at points horizontally corresponding to the first and third ports on one inner side of the innermost edge line among the spiral patterns. The spiral patterns have: microstrip lines having an octagonal shape by bending each band corner part at a slope surface of 120 degrees in a rectangular structure connecting the second and fourth ports to the first and third ports, wherein the microstrip lines are formed in multiple rows from the outermost edge line towards the innermost edge line. |