| 摘要 |
According to the present technology, a semiconductor apparatus comprises: a semiconductor substrate; a lower electrode formed in an upper part of the semiconductor substrate; an interlayer insulating layer formed in an upper part of an output of the semiconductor substrate including the lower electrode, and having a hole for exposing the lower electrode; and a variable resistive element including a variable resistive layer formed inside the hole and being in direct contact with the upper electrode, and a surface activating layer formed to be in contact with the variable resistive layer inside the hole and inducing capillary force with the variable resistor layer. |
