THROUGH SILICON VIA ELECTROPLATING FILLING SOLUTION AND METHOD FOR SUPPRESSING C U-SIC LAYER EXTRUSION IN THROUGH SILICON VIA USING THE FILLING SOLUTION

摘要

The present invention relates to a TSV electroplating filling solution and a method for suppressing extrusion of a plated layer in TSV using the same. A substance such as silicon carbide having a low thermal expansion coefficient is added to the TSV electroplating filling solution to manufacture the TSV electroplating filling solution to suppress extrusion of an electroplating filling layer which can be generated by a difference between the thermal expansion coefficients of a silicon substrate and the TSV electroplating filling layer due to high heat. Moreover, a current of a periodic pulse and a reverse pulse where current blocking time is applied are applied to the electroplating solution to form the electroplated layer in the TSV in order to suppress extrusion of the TSV electroplating filling layer generated in a high heat process among manufacturing processes of a semiconductor to prevent damage of a semiconductor chip and perform bottom-up filling without a defect such as a void in the TSV.