METAL ETCHANT COMPOSITION AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

The present invention provides a metal etchant composition and a producing method of a semiconductor device using the same. The metal etchant composition comprises: 0.1 to 20 wt % of organic peroxide; 0.1 to 70 wt% of organic acid; and 10 to 99.8 wt % of an alcohol-based solvent. The metal etchant composition is used in an anhydrous system.