发明名称 |
SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING SYSTEM AND RECORDING MEDIUM |
摘要 |
Provided is a substrate processing method which can remove part of a layer to be processed formed on a substrate under a normal pressure atmosphere while suppressing an effect on the substrate. A raw material of the layer to be processed which is decomposed by irradiating an ultraviolet ray under an oxygen-containing atmosphere, is coated on a substrate (W). The layer to be processed is formed by heating the raw material coated on the substrate (W). Subsequently, the substrate (W) having the layer to be processed is arranged in a process chamber (61) at an oxygen-containing atmosphere with a gas flow rate of 10 cm/sec or less. An ultraviolet ray is irradiated to the substrate (W). So, part of the layer to be processed is removed. |
申请公布号 |
KR20150146440(A) |
申请公布日期 |
2015.12.31 |
申请号 |
KR20150087444 |
申请日期 |
2015.06.19 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KANEDA MASATOSHI;OHISHI YUZO;YOSHIDA KEISUKE |
分类号 |
H01L21/027;G03F1/22;G03F7/20 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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