| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
| 摘要 |
A semiconductor device may include a substrate having a lower via-hole, an epitaxial layer having an opening exposing a top surface of the substrate, a semiconductor chip disposed on the top surface of the substrate and including first, second, and third electrodes, an upper metal layer connected to the first electrode, a supporting substrate disposed on the upper metal layer and having an upper via-hole, an upper pad disposed on the substrate and extending into the upper via-hole, a lower pad connected to the second electrode in the opening, and a lower metal layer covering a bottom surface of the substrate and connected to the lower pad through the lower via-hole. |
| 申请公布号 |
US2015380354(A1) |
申请公布日期 |
2015.12.31 |
| 申请号 |
US201514845435 |
申请日期 |
2015.09.04 |
| 申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
MIN Byoung-Gue;KO Sang Choon;LIM Jong-Won;AHN Hokyun;YOON Hyung Sup;MUN Jae Kyoung;NAM Eun Soo |
| 分类号 |
H01L23/535;H01L23/48 |
主分类号 |
H01L23/535 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate having a top surface and a bottom surface opposite to each other, the substrate having a lower via-hole, and the lower via-hole penetrating the substrate; an epitaxial layer disposed on the top surface of the substrate, the epitaxial layer having an opening; a lower pad disposed in the opening; a semiconductor chip disposed on the epitaxial layer, the semiconductor chip including a first electrode, a second electrode, and a third electrode; and a lower metal layer covering the top surface of the substrate, the lower metal layer connected to the lower pad through the lower via-hole, wherein the opening exposes the top surface of the substrate. |
| 地址 |
Daejeon KR |
