发明名称 |
PHYSICAL LAYOUT FEATURES OF INTEGRATED CIRCUIT DEVICE TO ENHANCE OPTICAL FAILURE ANALYSIS |
摘要 |
An integrated circuit device includes an active silicon layer, and at least one passive metal layer placed in an input region and an output region of the device. The at least one passive metal layer has a surface area and thickness for at least one of the input region or the output region to provide a phase shift of an optical laser, the phase shift corresponding to an optimized visibility of the optical laser during an optic failure analysis of the device. |
申请公布号 |
US2015380325(A1) |
申请公布日期 |
2015.12.31 |
申请号 |
US201414315324 |
申请日期 |
2014.06.25 |
申请人 |
QUALCOMM Incorporated |
发明人 |
KINDEREIT Ulrike;RANGANATHAN Lavakumar |
分类号 |
H01L21/66;G01R1/07;H01L27/092 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated circuit device, comprising:
an active silicon layer; and at least one passive metal layer placed in an input region and an output region of the device, wherein in at least one of the input region or the output region, the at least one passive metal layer is configured having a surface area and a thickness that provide a phase shift of a laser to improve visibility of the laser during an optic failure analysis of the device. |
地址 |
San Diego CA US |