LOW RESISTANCE AND DEFECT FREE EPITAXIAL SEMICONDUCTOR MATERIAL FOR PROVIDING MERGED FinFETs

摘要

A gate structure is formed straddling a first portion of a plurality of semiconductor fins that extend upwards from a topmost surface of an insulator layer. A dielectric spacer is formed on sidewalls of the gate structure and straddling a second portion of the plurality of semiconductor fins. Epitaxial semiconductor material portions that include a non-planar bottommost surface and a non-planar topmost surface are grown from at least the exposed sidewalls of each semiconductor fin not including the gate structure or the gate spacer to merge adjacent semiconductor fins. A gap is present beneath epitaxial semiconductor material portions and the topmost surface of the insulator layer. A second epitaxial semiconductor material is formed on the epitaxial semiconductor material portions and thereafter the second epitaxial semiconductor material is converted into a metal semiconductor alloy.

主权项

1. A method of forming a semiconductor device comprising:
providing a plurality of semiconductor fins extending upward from a topmost surface of an insulator layer; forming a gate structure straddling a first portion of each semiconductor fin of said plurality semiconductor fins; forming a dielectric spacer on a sidewall of each side of said gate structure and straddling a second portion of each semiconductor fin of said plurality of semiconductor fins; merging an adjacent pair of semiconductor fins of said plurality of semiconductor fins, wherein said merging comprises forming an epitaxial semiconductor material portion comprising a first epitaxial semiconductor material and having a non-planar bottommost surface and a non-planar topmost surface on at least sidewalls of each exposed semiconductor fin portion; forming a second epitaxial semiconductor material that comprises a different semiconductor material than said first epitaxial semiconductor material on said bottommost surface and topmost surface of each epitaxial semiconductor material portion; and converting said second epitaxial semiconductor material into a metal semiconductor alloy.