发明名称 NONVOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF
摘要 A nonvolatile memory device includes a mat including a plurality of memory blocks, an address decoder configured to select one of the memory blocks in response to an address, an input/output circuit including first and second page buffers configured to program a plurality of data pages into a single physical page of the selected one of the memory blocks or store the plurality of data pages read from the single physical page of the selected one of the memory blocks, and a control logic configured to perform a dumping operation at an other one of the first page buffers and second page buffers when a data input operation or a data output operation is performed at one of the first and second page buffers of the input/output circuit. The input/output circuit includes a plurality of page buffers. The plurality of page buffers include the first and second page buffers.
申请公布号 US2015378887(A1) 申请公布日期 2015.12.31
申请号 US201514697115 申请日期 2015.04.27
申请人 LEE Han-Jun;KANG Dongku 发明人 LEE Han-Jun;KANG Dongku
分类号 G06F12/02 主分类号 G06F12/02
代理机构 代理人
主权项 1. An operating method of a nonvolatile memory device including first and second page buffers connected to a mat through a plurality of bitlines, the operating method comprising: performing a first input operation that includes externally inputting first sub-page data of first page data to at least one of the first page buffers; performing a second input operation that includes inputting second sub-page data of the first page data to at least one of the second page buffers after performing the first input operation; and performing a first dumping operation at the first page buffers during the second input operation.
地址 Gunpo-si KR