P-N JUNCTION OPTOELECTRONIC DEVICE FOR IONIZING DOPANTS BY FIELD EFFECT

摘要

An optoelectronic device comprising a mesa structure including:
a first and a second semiconductor portions forming a p-n junction,a first electrode electrically connected to the first portion which is arranged between the second portion and the first electrode,the device further comprising:a second electrode electrically connected to the second portion,an element able to ionize dopants of the first and/or second semiconductor portion through generating an electric field in the first and/or second semiconductor portion and overlaying at least one part of the side flanks of at least one part of the first and/or second semiconductor portion and of at least one part of a space charge zone formed by the first and second semiconductor portions,upper faces of the first electrode and of the second electrode form a substantially planar continuous surface.

主权项

1. An optoelectronic device having at least one mesa structure including at least:
a first and a second semiconductor portions, one being p-doped and the other being n-doped, and forming together a p-n junction, a first electrode electrically connected to the first semiconductor portion which is arranged between the second semiconductor portion and the first electrode, the optoelectronic device further comprising at least: a second electrode electrically connected to the second semiconductor portion, an element able to ionize dopants of the first and/or second semiconductor portion through generating an electric field in the first and/or second semiconductor portion and overlaying at least one part of the side flanks of at least one part of the first and/or second semiconductor portion and of at least one part of a space charge zone formed by the first and second semiconductor portions, and wherein upper faces of at least the first electrode and of the second electrode form a substantially planar continuous surface.