发明名称 |
DETECTOR, PET SYSTEM AND X-RAY CT SYSTEM |
摘要 |
Each semiconductor chip of a detector comprises a semiconductor substrate having a plurality of photodetector units, an insulating layer formed on a front face of the semiconductor substrate, a common electrode arranged on the insulating layer, a readout line for electrically connecting a quenching resistance of each photodetector unit and the common electrode to each other, and a through electrode extending from the common electrode to a rear face of the semiconductor substrate through a through hole of the semiconductor substrate. |
申请公布号 |
US2015380457(A1) |
申请公布日期 |
2015.12.31 |
申请号 |
US201414768843 |
申请日期 |
2014.02.19 |
申请人 |
HAMAMATSU PHOTONICS K.K. |
发明人 |
FUJII Yoshimaro;NAGANO Terumasa;YAMAMURA Kazuhisa;SATO Kenichi;TSUCHIYA Ryutaro |
分类号 |
H01L27/146;G01N23/04;H01L31/0224;H01L31/115;G01T1/24;G01T1/29 |
主分类号 |
H01L27/146 |
代理机构 |
|
代理人 |
|
主权项 |
1. A detector comprising:
a wiring board; a plurality of semiconductor chips arranged on the wiring board while being two-dimensionally separated from each other; and first and second bump electrodes arranged between each of the semiconductor chips and the wiring board; wherein each of the semiconductor chips comprises: a semiconductor substrate having a plurality of photodetector units arranged two-dimensionally; an insulating layer formed on a front face of the semiconductor substrate; a common electrode arranged on the insulating layer; a readout line for electrically connecting a quenching resistance of each of the photodetector units and the common electrode to each other; and a through electrode extending from the common electrode to a rear face of the semiconductor substrate through a through hole of the semiconductor substrate; wherein each of the photodetector units comprises: an APD having a first semiconductor region of a first conduction type and a second semiconductor region of a second conduction type for constructing a p-n junction with the first semiconductor region and outputting a carrier; and the quenching resistance electrically connected to the second semiconductor region of the APD; wherein the first bump electrode electrically connects the through electrode and the wiring board to each other; and wherein the second bump electrode electrically connects the first semiconductor region of the APD and the wiring board to each other. |
地址 |
Hamamatsu-shi, Shizuoka JP |