发明名称 PHOTODETECTOR AND IMAGE SENSOR INCLUDING THE SAME
摘要 A photodetector may have a structure including conductive patterns and an intermediate layer interposed between the conductive patterns. A length L of at least one side of the second conductive pattern that overlaps the first conductive pattern and the intermediate layer satisfies the equation L=λ/2neff, wherein the neff is an effective refractive index of a surface plasmon waveguide formed of the first conductive pattern, the intermediate layer, and the second conductive pattern during a surface plasmon resonance. Heat generated in the intermediate layer when the electromagnetic wave having the wavelength λ is incident thereon generates a current variation.
申请公布号 US2015380453(A1) 申请公布日期 2015.12.31
申请号 US201514852016 申请日期 2015.09.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE HyunSeok;JUNG Jung-Kyu;PARK Yoondong;LEE Taeyon
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项
地址 Suwon-si KR