发明名称 THIN-FILM TRANSISTOR ARRAY SUBSTRATE, MANUFACTURING METHOD THEREFOR AND DISPLAY DEVICE THEREOF
摘要 A thin-film transistor array substrate is disclosed. The array substrate includes a support substrate, a plurality of scan lines on the support substrate, and a plurality of data lines on the support substrate, where the plurality of scan lines are insulated and intersect with the plurality of data lines. The array substrate also includes a plurality of pixel units located near intersections of the scan lines and the data lines, a first metal layer on the support substrate, and an insulating layer on the first metal layer, where the insulating layer includes a plurality of via holes, each exposing a portion of the first metal layer. The array substrate also includes a semiconductor layer on the insulating layer and electrically connected to the first metal layer, and a second metal layer on the semiconductor layer and electrically connected to the semiconductor layer.
申请公布号 US2015380437(A1) 申请公布日期 2015.12.31
申请号 US201514749585 申请日期 2015.06.24
申请人 Shanghai Tianma Micro-Electronics Co., Ltd. ;Tianma Micro-Electronics Co., Ltd. 发明人 ZHAI Yingteng;WU Yong
分类号 H01L27/12;H01L29/786;H01L21/4757;H01L29/423 主分类号 H01L27/12
代理机构 代理人
主权项 1. A thin-film transistor array substrate comprising: a substrate; a plurality of scan lines on the substrate; a plurality of data lines on the substrate, wherein the plurality of scan lines are insulated and intersect with the plurality of data lines, and a plurality of pixel units are located near intersections of the scan lines and the data lines; a first metal layer on the substrate; an insulating layer on the first metal layer, wherein the insulating layer comprises a plurality of via holes, each exposing a portion of the first metal layer; a semiconductor layer on the insulating layer and electrically connected to the first metal layer; and a second metal layer on the semiconductor layer and electrically connected to the semiconductor layer.
地址 Shanghai CN