METHOD OF SELECTIVELY DEPOSITING FLOATING GATE MATERIAL IN A MEMORY DEVICE

摘要

Undesirable metal contamination from a selective metal deposition process can be minimized or eliminated by employing a first material layer on a bevel and a back side of a substrate, while providing a second material layer only on a front side of the substrate. The first material layer and the second material layer are selected such that a selective deposition process of a metal material provides a metal material portion only on the second material layer, while no deposition occurs on the first material layer or isolated islands of the metal material are formed on the first material layer. Any residual metal material can be removed from the bevel and the back side by a wet etch to reduce or prevent metal contamination from the deposited metal material.

主权项

1. A method of forming a semiconductor structure comprising:
forming a stack comprising a first material layer including a first material and a second material layer including a second material on a front side and a back side of a substrate; removing the second material layer from a bevel and the back side of the substrate, wherein surfaces of the first material layer are physically exposed at the bevel and the back side; performing a selective metal deposition process that deposits a metal material at a higher nucleation density on the second material layer than on the first material layer, wherein the metal material is deposited as at least one continuous layer on the second material layer and as isolated islands on the first material layer; and removing the isolated islands of the metal material from the bevel and the back side while not removing the at least one layer of the metal material.