METHOD OF GROWING NITRIDE SEMICONDUCTOR LAYER, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME

摘要

Exemplary embodiments of the present invention provide a method of growing a nitride semiconductor layer including growing a gallium nitride-based defect dispersion suppressing layer on a gallium nitride substrate including non-defect regions and a defect region disposed between the non-defect regions, and growing a gallium nitride semiconductor layer on the defect dispersion suppressing layer.