METHOD OF PATTERNING A LOW-K DIELECTRIC FILM

摘要

Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.

主权项

1. An etch chamber, comprising:
a first processing stage for exposing a sample to a nitrogen-free plasma process; and a second, different, processing stage for exposing the sample to a remote plasma process based on a combination of gases selected from the group consisting of NF3/O2/N2, CF4/O2/N2 and NF3/NH3.