| 发明名称 |
ELECTRODE FOR USE IN ION IMPLANTATION APPARATUS AND ION IMPLANTATION APPARATUS |
| 摘要 |
An electrode for use in an ion implantation system includes a body portion and a penetration portion. The penetration portion includes penetration holes which are closely and regularly arranged. The penetration holes have the shape of a circle or a regular polygon with at least four sides. The electrode has an increased aperture ratio which, in turn, increases the density of the ion beam, thereby improving the efficiency of the ion implantation process. |
| 申请公布号 |
US2015380203(A1) |
申请公布日期 |
2015.12.31 |
| 申请号 |
US201414500160 |
申请日期 |
2014.09.29 |
| 申请人 |
Boe Technology Group Co., Ltd. ;Ordos Yuansheng Optoelectronics Co., Ltd. |
发明人 |
Wang Zhiqiang;Kang Feng;Yang Bo;Xu Jingyi |
| 分类号 |
H01J37/08;H01J37/05;H01J37/317 |
主分类号 |
H01J37/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electrode for use in an ion implantation apparatus, the electrode comprising a body portion and a penetration portion, wherein the penetration portion comprises a plurality of penetration holes which are closely and regularly arranged, and wherein the penetration holes have the shape of a circle or a regular polygon with at least four sides. |
| 地址 |
Beijing CN |
