发明名称 Mesoporous Structure Solar Cell with Siloxane Barrier
摘要 A method is provided for forming a mesoporous-structured solar cell with a silane or siloxane barrier. The method forms a transparent conductive electrode overlying a transparent substrate. A non-mesoporous layer of a first metal oxide overlies the transparent conductive electrode, with a mesoporous layer of a second metal oxide overlying the non-mesoporous layer of first metal oxide. An aminoalkoxysilane layer overlies the mesoporous layer of second metal oxide. Over the aminoalkoxysilane layer is deposited a semiconductor absorber layer comprising organic and inorganic components. Using the aminoalkoxysilane linker, the mesoporous layer of second metal oxide is linked to the semiconductor absorber layer. A hole-transport material (HTM) layer is formed overlying the semiconductor absorber layer, and a metal electrode overlies the HTM layer. A mesoporous-structured solar cell with a silane or siloxane barrier is also provided.
申请公布号 US2015380170(A1) 申请公布日期 2015.12.31
申请号 US201414320702 申请日期 2014.07.01
申请人 Sharp Laboratories of America, Inc. 发明人 Koposov Alexey;Zhan Changqing;Pan Wei
分类号 H01G9/20;H01L51/00 主分类号 H01G9/20
代理机构 代理人
主权项 1. A mesoporous-structured solar cell with a silane or siloxane barrier, the solar cell comprising: a transparent substrate; a transparent conductive electrode overlying the transparent substrate; a non-mesoporous layer of a first metal oxide overlying the transparent conductive electrode; a mesoporous layer of a second metal oxide overlying the non-mesoporous layer of first metal oxide; a semiconductor absorber layer overlying the mesoporous layer of second metal oxide, comprising organic and inorganic components; an aminoalkoxysilane linker linking the semiconductor absorber layer to the mesoporous layer of second metal oxide; a hole-transport material (HTM) layer overlying the semiconductor absorber layer; and, a metal electrode overlying the HTM layer.
地址 Camas WA US