THIN-FILM AMBIPOLAR LOGIC

摘要

An ambipolar electronic device is disclosed. The device may include a field-effect transistor (FET), which may have a handle substrate layer, two contacts and an inorganic crystalline layer between the handle substrate layer and the contacts. The inorganic crystalline layer may have a doped channel region between the contacts. The FET may also have a dielectric layer between the contacts, attached to the inorganic crystalline layer, and a gate layer, attached to the dielectric layer. The FET may conduct current, in response to a first gate voltage applied to the gate layer, using electrons as a majority carrier, along the length of the channel region between the contacts. The FET may also conduct current, in response to a second gate voltage applied to the gate layer, using holes as a majority carrier, along the length of the channel region between the contacts.

主权项

1. An ambipolar electronic device comprising:
a first FET (field-effect transistor) having:
a handle substrate layer;a first contact;a second contact;an inorganic crystalline layer formed between a top surface of the handle substrate layer and the first and second contacts and having a channel region with a length extending between the first contact and the second contact;a dielectric layer attached, between the first contact and the second contact, to a top surface of the inorganic crystalline layer; anda gate layer, attached to a top surface of the dielectric layer;wherein the first FET is configured to:
conduct current, in response to a first gate voltage applied to the gate layer and using electrons as a majority carrier, along the length of the channel region between the first contact and the second contact;conduct current, in response to a second gate voltage applied to the gate layer and using holes as a majority carrier, along the length of the channel region between the first contact and the second contact.