OVERVOLTAGE PROTECTION COMPONENT

摘要

An integrated circuit includes a vertical Shockley diode and a first vertical transistor. The diode is formed by, from top to bottom of a semiconductor substrate, a first region of a first conductivity type, a substrate of a second conductivity type, and a second region of the first conductivity type having a third region of the second conductivity type formed therein. The vertical transistor is formed by, also from top to bottom, a portion of the second region and a fourth region of the second conductivity type. The third and fourth regions are electrically connected to each other.

主权项

1. An integrated circuit, comprising:
a vertical Shockley diode comprising from top to bottom:
a first region of a first conductivity type,a substrate of a second conductivity type, anda second region of the first conductivity type having a third region of the second conductivity type formed therein, and a first vertical transistor comprising from top to bottom:
a portion of said substrate separated from the Shockley diode by a vertical wall,a portion of the second region,a fourth region of same conductivity type as the third region formed in said portion of the second region, the third region connected to the fourth region.