MEMORY CELL ARRAY AND CELL STRUCTURE THEREOF

摘要

A read-only memory (ROM) cell array and a cell structure thereof is disclosed. The ROM cell array is coupled to a plurality rows of bit-lines and a plurality columns of word-lines and comprises: a plurality of sub-cell-arrays arranged along the column direction, each sub-cell-array comprising a plurality of unit cell structures. Each unit cell structure comprises: an cell base region defining a cell boundary, comprising an blanket OD layer having a wide-block profile arranged on a substrate and defining a continuous common source node, a drain pad disposed above the OD layer, arranged in selectively connection with a bit line, a vertical channel structure bridging between the drain pad and the OD layer, and a gate structure disposed vertically between the drain pad and the OD layer and arranged in connection with a word-line. The sub-cell-array boundary is defined entirely within the coverage of the OD layer.

主权项

1. A semiconductor read-only memory (ROM) unit cell structure comprising:
a cell base region defining a cell boundary, comprising a blanket OD layer having a wide-block profile disposed on a substrate and defining a continuous common source node, arranged in selective connection with a ground (Vss); a drain pad disposed above the OD layer selectively connected with a bit line; a vertical channel structure bridging the drain pad and the OD layer; and a gate structure disposed vertically between the drain pad and the OD layer and connected with a word-line; wherein the cell boundary is defined within the coverage of the OD layer.