| 发明名称 |
MIM/RRAM Structure with Improved Capacitance and Reduced Leakage Current |
| 摘要 |
Some embodiments of the present disclosure provide an integrated circuit (IC) device including a metal-insulator-metal (MIM) capacitor structure. The MIM capacitor structure includes a lower metal capacitor electrode, an upper metal capacitor electrode, and a capacitor dielectric separating the lower metal capacitor electrode from the upper metal capacitor electrode. The capacitor dielectric is made up of an amorphous oxide/nitride matrix and a plurality of metal or metal oxide/nitride nano-particles that are randomly distributed over the volume of amorphous oxide/nitride matrix. |
| 申请公布号 |
US2015380477(A1) |
申请公布日期 |
2015.12.31 |
| 申请号 |
US201414316910 |
申请日期 |
2014.06.27 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Huang Jian-Shiou;Chang Yao-Wen;Lin Hsing-Lien;Tsai Cheng-Yuan;Tsai Chia-Shiung |
| 分类号 |
H01L49/02;H01L21/02 |
主分类号 |
H01L49/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit (IC) device including a metal-insulator-metal (MIM) capacitor structure comprising:
a lower metal capacitor electrode; an upper metal capacitor electrode; and a capacitor dielectric separating the lower metal capacitor electrode from the upper metal capacitor electrode, wherein the capacitor dielectric is made up of an amorphous oxide or amorphous nitride matrix and a plurality of metal or metal oxide or metal nitride nano-particles that are randomly distributed over the volume of amorphous oxide or amorphous nitride matrix. |
| 地址 |
Hsin-Chu TW |
