发明名称 |
ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
Disclosed herein is a method for manufacturing an array substrate. The method includes forming a source electrode and a drain electrode on a substrate. A semiconductor layer, an organic insulating layer, and a gate electrode layer are sequentially formed to cover the substrate, the source electrode, and the drain electrode. A patterned photoresist layer is formed on the gate electrode layer. The exposed portion of the gate electrode layer, and a portion of the organic insulative layer and a portion of the semiconductor layer thereunder are removed to form a gate electrode. An organic passivation layer is formed on the gate electrode, the source electrode, and the drain electrode. The organic passivation layer has a contact window to expose a portion of the drain electrode. A pixel electrode is formed on the organic passivation layer and the exposed portion of the drain electrode. |
申请公布号 |
US2015380445(A1) |
申请公布日期 |
2015.12.31 |
申请号 |
US201514845291 |
申请日期 |
2015.09.04 |
申请人 |
E Ink Holdings Inc. |
发明人 |
LAN Wei-Chou;SHINN Ted-Hong;WANG Henry;YEH Chia-Chun |
分类号 |
H01L27/12;H01L21/02;H01L29/51;H01L21/4763;H01L29/66;H01L29/49 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing an array substrate, comprising:
providing a substrate; forming a source electrode and a drain electrode on the substrate; sequentially forming a semiconductor layer, an organic insulating layer and a gate electrode layer to cover the substrate, the source electrode and the drain electrode; forming a patterned photoresist layer on the gate electrode layer, wherein a portion of the gate electrode layer is exposed; removing the exposed portion of the gate electrode layer, and a portion of the organic insulating layer and a portion of the semiconductor layer under the exposed portion of the gate electrode layer to form a gate electrode and let a sidewall of the semiconductor layer be continuous with a sidewall of the organic insulating layer; forming an organic passivation layer on the gate electrode, the source electrode and the drain electrode, wherein the organic passivation layer has a contact window to expose a portion of the drain electrode; and forming a pixel electrode on the organic passivation layer, wherein the pixel electrode is electrically connected to the drain electrode through the contact window. |
地址 |
Hsinchu TW |