PHOTONIC CIRCUIT DEVICE WITH REDUCED LOSSES CAUSED BY ELECTRICAL CONTACT PADS

摘要

A photonic circuit device can include a light-generating structure and at least two electrical contact pads. The light-generating structure can include: an n-doped semiconductor layer; a p-doped semiconductor layer; and an active gain section. The active gain section can include layers stacked along a stacking direction; can be arranged between the semiconductor layers; and can be coupled in the photonic circuit. The electrical contact pads can include an n-contact electric pad and a p-contact electric pad, in electrical contact with the n-doped semiconductor layer and the p-doped semiconductor layer, respectively. One of the pads can be in direct contact with the light-generating structure. In embodiments, the ratio of a width of the one of the electrical contact pads to the width of the active gain section can be between 1.35 and 3.85 measured in a direction that is orthogonal to each of the stacking direction and the propagation direction.

主权项

1. A photonic circuit device, comprising:
a light-generating structure, comprising:
an n-doped semiconductor layer,a p-doped semiconductor layer, andan active gain section comprising layers stacked along a stacking direction, the active gain section arranged between the n-doped semiconductor layer and the p-doped semiconductor layer, the active gain section coupled in the photonic circuit device for generating light propagating along a given propagation direction; and at least two electrical contact pads, including an n-contact electric pad and a p-contact electric pad, in electrical contact with the n-doped semiconductor layer and the p-doped semiconductor layer, respectively, where one of the electrical contact pads, at least, is in direct contact with the light-generating structure, wherein a ratio of a width of said one of the electrical contact pads to the width of the active gain section is between 1.35 and 3.85, the widths of said one of the electrical contact pads and the width of the active gain section measured orthogonal to each of the stacking direction and said given propagation direction.