| 发明名称 |
BULK ACOUSTIC RESONATOR COMPRISING ALUMINUM SCANDIUM NITRIDE |
| 摘要 |
A method of forming a film bulk acoustic resonator structure comprises forming a first electrode on a substrate, forming a piezoelectric layer on the first electrode, and forming a second electrode on the piezoelectric layer. The first and second piezoelectric layers are formed by a sputter deposition process using at least one sputter target comprising a combination of scandium and aluminum. |
| 申请公布号 |
US2015381144(A1) |
申请公布日期 |
2015.12.31 |
| 申请号 |
US201514843943 |
申请日期 |
2015.09.02 |
| 申请人 |
Avago Technologies General IP (Singapore) Pte. Ltd. |
发明人 |
Bradley Paul;Shirakawa Alexandre;Bader Stefan |
| 分类号 |
H03H9/70;H03H7/01;H03H3/04;H03H9/205 |
主分类号 |
H03H9/70 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a bulk acoustic wave (BAW) resonator structure, the method comprising:
providing a substrate; forming an air cavity in the substrate; forming a first electrode over the and over the air cavity; forming a piezoelectric layer on the first electrode by a sputter deposition process using at least one sputter target comprising a combination of scandium and aluminum, the piezoelectric layer having a thickness in a range of approximately 1.0 μm to approximately 1.5 μm; and forming a second electrode over the piezoelectric layer. |
| 地址 |
Singapore SG |
