发明名称 FINFET THERMAL PROTECTION METHODS AND RELATED STRUCTURES
摘要 A method and structure for protecting high-mobility materials from exposure to high temperature processes includes providing a substrate having at least one fin extending therefrom. The at least one fin includes a dummy channel and source/drain regions. A dummy gate stack is formed over the dummy channel. A first inter-layer dielectric (ILD) layer is formed on the substrate including the fin. The first ILD layer is planarized to expose the dummy gate stack. After planarizing the first ILD layer, the dummy gate stack and the dummy channel are removed to form a recess, and a high-mobility material channel region is formed in the recess. After forming the high-mobility material channel region, contact openings are formed within a second ILD layer overlying the source/drain regions, and a low Schottky barrier height (SBH) material is formed over the source/drain regions.
申请公布号 US2015380558(A1) 申请公布日期 2015.12.31
申请号 US201414319610 申请日期 2014.06.30
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 Huang Yu-Lien
分类号 H01L29/78;H01L21/02;H01L29/20;H01L21/3105;H01L29/267;H01L29/66;H01L21/324 主分类号 H01L29/78
代理机构 代理人
主权项 1. A method of semiconductor device fabrication, comprising: providing a substrate including a fin extending therefrom; forming a source region and a drain region in the fin; and after forming the source region and the drain region in the fin, forming a first material that has a mobility greater than silicon in a channel region of the fin or on the source and drain regions.
地址 Hsin-Chu TW