| 发明名称 |
Metal Gate of Gate-All-Around Transistor |
| 摘要 |
The disclosure relates to a semiconductor device. An exemplary structure for a semiconductor device comprises a nanowire structure comprising a channel region between a source region and a drain region; and a metal gate surrounding a portion the channel region, wherein the metal gate comprising a first gate portion adjacent to the source region having a first thickness and a second gate portion adjacent to the drain region having a second thickness less than the first thickness. |
| 申请公布号 |
US2015380539(A1) |
申请公布日期 |
2015.12.31 |
| 申请号 |
US201414318377 |
申请日期 |
2014.06.27 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Colinge Jean-Pierre;Liu Chi-Wen |
| 分类号 |
H01L29/775;H01L29/66;H01L29/40;H01L29/423 |
主分类号 |
H01L29/775 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a nanowire structure comprising a channel region between a source region and a drain region; and a metal gate surrounding a portion the channel region, wherein the metal gate comprising a first gate portion adjacent to the source region having a first thickness and a second gate portion adjacent to the drain region having a second thickness less than the first thickness. |
| 地址 |
Hsin-Chu TW |
