发明名称 MESA STRUCTURE DIODE WITH APPROXIMATELY PLANE CONTACT SURFACE
摘要 Electronic device with mesa structure diodes connected in series, each comprising: a first and a second doped semiconductor portion forming a p-n junction, such that a first part of the second portion located between a second part of the second portion and the first portion forms an offset from the second part, on a single side,a first electrode electrically connected to the first portion, and a second electrode electrically connected to the second portion at an upper face of the second part,dielectric portions covering the side faces of the first portion, the second portion and the first electrode,and in which the upper faces of the first electrode, the second electrode and dielectric portions form an approximately plane continuous surface.
申请公布号 US2015380459(A1) 申请公布日期 2015.12.31
申请号 US201514748707 申请日期 2015.06.24
申请人 Commissariat a L'Energie Atomique et aux Energies Alternatives 发明人 BONO Hubert;ROBIN Ivan-Christophe
分类号 H01L27/15;H01L33/00;H01L27/144;H01L31/18;H01L33/06;H01L31/0352 主分类号 H01L27/15
代理机构 代理人
主权项 1. An electronic device comprising at least two mesa structure diodes, each diode comprising at least: a first and a second doped semiconductor portion forming a p-n junction, such that a first part of the second doped semiconductor portion located between a second part of the second doped semiconductor portion and the first doped semiconductor portion forms an offset from the second part of the second doped semiconductor portion, a first electrode electrically connected to the first doped semiconductor portion, and a second electrode electrically connected to the second doped semiconductor portion at an upper face of the second part of the second doped semiconductor portion, dielectric portions covering the side faces of the first doped semiconductor portion, the second doped semiconductor portion and the first electrode such that dielectric portions at the sides of the mesa structure that do not form an offset are continuous along the entire height of the mesa structure, in which the upper faces of the first electrode, the second electrode and the dielectric portions form an approximately plane continuous surface, and in which: the diodes are electrically connected in series such that the first electrode of one of the two diodes is electrically connected to the second electrode of the other of the two diodes, the second electrode of said other of the two diodes is in contact with one of the dielectric portions of said one of the two diodes covering one of the sides of the mesa structure that does not form the offset.
地址 Paris FR