SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

摘要

The present invention provides a semiconductor structure, which comprises a semiconductor substrate and at least two semiconductor fins located on the semiconductor substrate, wherein: the at least two semiconductor fins are parallel to each other; and the parallel sidewall surfaces of the at least two semiconductor fins have different crystal planes. The present invention further provides a method for manufacturing aforesaid semiconductor structure. The technical solution provided in the present invention exhibits following advantages: it makes possible to form two parallel semiconductor fins with different sidewall crystal planes on the same substrate through changing crystal orientation of a part of the substrate; the two semiconductor fins individually have {100} sidewall crystal plane and {110} sidewall crystal plane, and are applied for forming NMOS and PMOS devices respectively; in this way, the overall performance of CMOS circuits is improved; besides, the two semiconductor fin structures are parallel to each other, such that it becomes less difficult to perform lithography and avoids wasting of wafer area.

主权项

1. A semiconductor structure, comprising: a semiconductor substrate and at least two semiconductor fins located on the semiconductor substrate, wherein:
the at least two semiconductor fins are parallel to each other; and the parallel side surfaces of the at least two semiconductor fins have different crystal planes.