| 摘要 |
A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad. |
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor chip including a field effect transistor and having a main surface over which a source electrode pad and a gate electrode pad; a source lead electrically connected to the source electrode pad of the semiconductor chip via a first conductive material; a gate lead electrically connected to the gate electrode pad of the semiconductor chip via a second conductive material; and a sealing body sealing the semiconductor chip, wherein a cross-section area of the first conductive material is greater than a cross-section area of the second conductive material, wherein, in a plan view from a side of the main surface of the semiconductor chip, the semiconductor chip has a quadrangular shape, the main surface has a first side, a second side opposite the first side, and a third side extending in a direction which intersects with the first and second sides, wherein, in the plan view, each of the source and gate leads is disposed more proximate to the first side than the other sides, and wherein, in the plan view, the gate electrode pad is disposed at a corner portion which is composed of the second and third sides. |
