发明名称 |
METHOD FOR MANUFACTURING MOSFET |
摘要 |
Provided is a method for manufacturing a MOSFET, comprising: epitaxially growing a first semiconductor layer on a semiconductor substrate; epitaxially growing a second semiconductor layer on the first semiconductor layer; forming a shallow trench isolation in the first semiconductor layer and the second semiconductor layer to define an active region for the MOSFET; forming on the second semiconductor layer a gate stack and a spacer surrounding the gate stack; forming openings in the second semiconductor layer using the shallow trench isolation, the gate stack and the spacer as a hard mask; epitaxially growing, in each of the openings, a third semiconductor layer using a bottom surface and sidewalls of the opening as a growth seed layer, wherein the third semiconductor layer comprises a material different from that of the second semiconductor layer; and performing ion implantation into the third semiconductor layer to form source and drain regions. |
申请公布号 |
US2015380297(A1) |
申请公布日期 |
2015.12.31 |
申请号 |
US201214759324 |
申请日期 |
2012.10.30 |
申请人 |
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES |
发明人 |
YIN Haizhou;QIN Changliang;ZHU Huilong |
分类号 |
H01L21/762;H01L21/311;H01L29/16;H01L29/06;H01L29/66 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a MOSFET, comprising:
epitaxially growing a first semiconductor layer on a semiconductor substrate; epitaxially growing a second semiconductor layer on the first semiconductor layer; forming a shallow trench isolation in the first semiconductor layer and the second semiconductor layer to define an active region for the MOSFET; forming on the second semiconductor layer a gate stack and a spacer surrounding the gate stack; forming openings in the second semiconductor layer using the shallow trench isolation, the gate stack and the spacer as a hard mask; epitaxially growing, in each of the openings, a third semiconductor layer using a bottom surface and sidewalls of the opening as a growth seed layer, wherein the third semiconductor layer comprises a material different from that of the second semiconductor layer; and performing ion implantation into the third semiconductor layer to form source and drain regions. |
地址 |
Beijing CN |