| 摘要 |
A semiconductor device includes a laminate where conductive layers and insulating layers are alternately stacked; first semiconductor patterns which penetrate the laminate and are arranged in a first direction; second semiconductor patterns which are adjacent to the first semiconductor patterns in a second direction intersecting with the first direction, and are arranged in the first direction; and a blocking pattern which touches at least one first semiconductor pattern and at least one second semiconductor pattern which are adjacent to each other in the second direction among the first and the second semiconductor patterns, and is filled in a region between the first semiconductor pattern and the second semiconductor pattern. |
